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ALD is a major processing approach in the semiconductor industry. Generally, semiconductor devices are fabricated by depositing thin films of materials on the wafer surface to form a pattern of thin gates and vias. This is typically accomplished through a sequence of processes. The processes include the steps of coating, patterning, etching, and stripping. These steps are generally carried out in separate machines, and thus are performed sequentially in a time consuming multi-chamber processing system. ALD deposition chambers are becoming increasingly popular, because most can be operated at atmospheric pressures and produce ultra-thin films with high conformal nature. By comparison, other thin-film deposition techniques including physical vapor deposition, chemical vapor deposition, spin-on coating, etc. have limitations such as a high need of vacuum. Vapor-phase deposition processes require vacuum pumping, and most are not suitable for wafer-scale processing, mainly due to the surface tension of a viscous gas and resulting pinhole formation. ALD is particularly useful for manufacturing various nanotechnologies because it is a self-limiting technique driven by surface reactions, and the film growth process can be monitored in real-time. The ALD cycle consists of these four steps: the reaction of precursors to form a solid product on the surface, the purging of the precursor(s) that are no longer needed, the surface cleaning by the pulse of inert gas, and finally the reaction of the precursor(s) to form a new product. Typically, the reaction of precursor and the purging of the abort gas are done in the same chamber. This is because the precursor is usually a highly reactive gas and the abort gas is generally inexpensive and inert. The precursors are inert gases that are dissociated to form a reactive intermediate species that grows the film by providing reactive sites. The growth reaction is terminated after a predefined number of reactive sites are available, which is commonly denoted as x cycle. The reaction sequence is typically saturated with respect to the precursors, and additional precursors will not add to the film growth. ALD was originally developed for gas sensing, but it has since evolved to be a powerful technique in other areas such as the microelectrical mechanical systems (MEMS), microelectromechanical systems (MEMS), and nano-optical science. d2c66b5586

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